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I'm not sure who originally wrote that high quality epitaxial GaN is "impossible to grow", but I changed it to "difficult". Mainly I did this because I know for a fact that it is possible, since I have read about 10 journal articles describing how to do it, and I watched someone do it in a lab last week, but I think maybe I should have just deleted the entire paragraph. It's outdated at best. Any objections? Jermor 17:11, 3 July 2007 (UTC)
I guess by "difficult" one means comparing it with other semiconductor material systems grown by comparative techniques. One measure of quality is the defect density which is certainly higher for GaN (still best in III-nitrides) than GaAs or Si. Moreover, morphology for gaN is still poor for these semiconductors. One of the reasons for such a quality is the absence of native substrates to grow nitrides on. I must say, however, that there is a tremendous amount of work going on in this respect with growth of bulk-like GaN by HVPE and high pressure techniques. Pranobmisra 20:14, 15 August 2007 (UTC)Pranob Misra
Are these crystals what make blue diode lasers so expensive? Where does the high cost come from? -- Beland ( talk) 22:10, 27 July 2008 (UTC)
I suspect the author of the intro section meant to say "its susceptibility to ionising radiation damage is low", rather than "sensitivity", since the latter could be interpreted as a statement about its photo-sensitivity (stated as current per unit particle energy), when used as a photo-diode/detector.
Suggest a rewording along these lines.
Matt Whyndham ( talk) 10:16, 3 February 2009 (UTC)
This is a major breakthrough and tons of material is published, and it is an industrial and commercial process. I take offense at the removal of the related single sentence especially with the rather flimsy excuse of "inaccesibility" of the references. EDN is a mainstream publication for the electronic industry. Is it possible that the editor who reverted has an ultirior motive? One can not help but feel that way. It would have been far more constructive to fix the reference or find a better references since GaN on Si is a rather significant milestone in technology and its absence from the whole article is an oddity. —Preceding unsigned comment added by 12.229.112.98 ( talk) 23:13, 9 February 2010 (UTC)
More recently, GaN has been succesfully grown on Si, making it possible to scale up production and lower costs drastically<ref>"GaN-on-Si technology leveraged for power switches and white LEDs", EDN, July 2009.</ref><ref>“GaN-on-Si Reliability: A Comparative Study between Process Platforms”, S. Singhal, A. Chaudhari, A.W. Hanson, J.W.Johnson, R. Therrien, P. Rajagopal, T. Li, C. Park, A.P. Edwards, E.L. Piner, I.C. Kizilyalli, K.J. Linthicum, ROCS (2006)</ref>.
I ended up on this page after googling GAN. I know I need to add some sort of disambig pointer at the top of the page, but which template do I use? Maury Markowitz ( talk) 12:25, 3 June 2014 (UTC)
This article could be expanded. It seems to have a reduced amount of information. It would be nice to have a section with electrical, chemical and optical properties, especially for semiconductors and a possible comparison to SiC technology which is popular at this point in time.
ICE77 ( talk) 06:12, 24 June 2015 (UTC)
Article says " The large band gap means that the performance of GaN transistors is maintained up to higher temperatures than silicon transistors" but up to what temperatures ? - Rod57 ( talk) 02:45, 21 December 2015 (UTC)
Has there been any use or discussion of using GaN for LSI processors or memory chips ? or any digital logic ? - Rod57 ( talk) 07:18, 23 June 2017 (UTC)
The article says "The environment, health and safety aspects of gallium nitride sources (such as trimethylgallium and ammonia) and industrial hygiene monitoring studies of MOVPE sources have been reported recently in a review.[34]"
Note 34 is dated 2004 which is 14 years ago. I'm not sure the text should still say "recently". ICE77 ( talk) 23:45, 19 June 2018 (UTC)
I suggest the article introduction should be updated to mention the increasingly widespread use of 650V GaN power devices in consumer electronics. Probably only needs a single sentence? [Dell, Apple, Harman, Samsung, Lenovo all now use GaN in AC power adapters] 75.135.150.19 ( talk) 21:54, 5 July 2023 (UTC)
The paragraph:
"Unlike silicon transistors which switch off due to power surges, GaN transistors are typically depletion mode devices (i.e. on / resistive when the gate-source voltage is zero). Several methods have been proposed to reach normally-off (or E-mode) operation, which is necessary for use in power electronics: ... "
...should be updated to reflect the fact that normally-off GaN power transistors have been in production for several years now from a number of semiconductor manufacturers. 75.135.150.19 ( talk) 21:58, 5 July 2023 (UTC)