Hongxing Jiang (
Chinese: 江红星) is a Chinese-American
physicist and
engineer working in the field of wide bandgap
semiconductors and photonic devices. He is an original inventor of
MicroLED. In 2000, the research team led by Hongxing Jiang and
Jingyu Lin (
Chinese: 林景瑜) realized the operation of the first MicroLED and passive driving MicroLED microdisplay.[1][2][3][4][5] In 2009, he and his colleagues at III-N Technology, Inc. and
Texas Tech University patented and realized the first active driving high-resolution and video-capable microLED microdisplay in
VGA format (640 x 480 pixels) via heterogeneous integration of MicroLED array with
CMOS active-matrix driver [6] and the work was published in the following years.[7][8][9][10][11]
The single-chip high-voltage DC/AC LEDs via on-chip integration of mini- and MicroLED arrays developed by their team in 2002 have been widely commercialized for general solid-state lighting and automobile headlights.[12][13][14][15][16]
Under the support of
DARPA-MTO’s SUVOS,[17] CMUVT,[18] DUVAP,[19] and VIGIL[20] programs, their research team has contributed to the early developments of III-nitride deep UV emitters and detectors and InGaN energy devices[21][22][23]in the United States. These include the development of the first deep UV picosecond time-resolved optical spectroscopy system (down to 195 nm) for characterizing ultrawide bandgap (UWBG) semiconductor materials,[24] the first prediction and confirmation that Al-rich AlGaN deep UV emitters emit light in the transverse-magnetic (TM) mode,[25][26] the demonstration of the first UV/blue photonic crystal LED (PC-LED),[27][28]and AlN deep UV avalanche detectors with an ultrahigh specific detectivity.[29] His team was also one of the first to determine the Mg acceptor energy level in AlN optically[30] and electrically[31] and to demonstrate the conductivity control in Al-rich AlGaN.[32][33][34][35] Supported by
ARPA-E, their research team has developed crystal growth technologies for producing thick epitaxial films (or quasi-bulk crystals) of hexagonal boron nitride (h-BN) UWBG semiconductor in large wafer sizes and realized h-BN thermal neutron detectors with a record high detection efficiency.[36][37][38][39]
While in graduate school, Hongxing Jiang and Jingyu Lin developed the first analytical formalism based on the Newtonian gravitational force to describe the orbit of a star moving into and out of a galaxy and predicated the phenomenon of mass precession.[40] This effect has been used by astrophysicists to constrain the abundance of dark matter in the solar system and the Galactic Centre.[41][42]
Education
He obtained PhD in physics in 1986 from
Syracuse University under the guidance of Arnold Honig. He received his BS in physics in 1981 from
Fudan University, China. He came to US for graduate studies through the
CUSPEA program.
Career
He has been working on III-nitride wide bandgap semiconductors since 1995. Currently, he is a co-director of the Nanophotonics Center and the inaugural
Edward E. Whitacre Jr. endowed chair and Horn Distinguished Professor of Electrical & Computer Engineering within the
Edward E. Whitacre Jr. College of Engineering at
Texas Tech University (TTU). To be designated a Horn Professor is the highest honor received by a Texas Tech faculty member.[43] In 2008, he relocated his research group to TTU from
Kansas State University where he was a University Distinguished Professor of Physics.[44]
Awards
Recipient of “Global SSL Award of Outstanding Achievements” 2021 for his invention of
microLED, awarded by the International SSL (Solid-State Lighting) Alliance (ISA)[45][46][47]
^T. Harada, T. Igata, H. Saida, and Y. Takamori, "General formulae for the periapsis shift of a quasi-circular orbit in static spherically symmetric spacetimes and the active gravitational mass density," International Journal of Modern Physics D 32, 2350098 (2023).
https://doi.org/10.1142/S0218271823500980https://arxiv.org/abs/2210.07516